STMicroelectronics releases 100V industrial-grade STripFET F8 transistor with 40% higher figure of merit
【Lansheng Technology Information】On May 24, STMicroelectronics' STL120N10F8 N-channel 100V power MOSFET has extremely low gate-drain charge (QGD) and on-resistance RDS(on), and the figure of merit (FoM) 40% higher than the previous generation of similar products.
The new MOSFET from STMicroelectronics utilizes ST's STPOWER STripFET F8 advanced technology and introduces an oxide-filled trench process, which combines extremely low conduction loss and low gate charge to achieve high-efficiency switching performance. As a result, the STL120N10F8 has a maximum on-resistance RDS(on) of 4.xn--6m-fcc (at VGS = 10V) and operates efficiently up to 600kHz.
STripFET F8 technology also ensures that the output capacitance value can mitigate the drain-source voltage spike, minimizing charge and discharge energy waste. In addition, the body-drain diode of this MOSFET has a higher softness characteristic. These improvements reduce electromagnetic emissions, simplify compliance testing of the final system, and ensure electromagnetic compatibility (EMC) compliance with applicable product standards.
The STL120N10F8 has excellent energy efficiency and low electromagnetic radiation, which can enhance the power conversion performance of hard-switching and soft-switching topologies. In addition, it is the first STPOWER 100V STripFET F8 MOSFET to fully meet industrial specifications, making it ideal for motor control, power supplies and converters for telecom and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-operated equipment.
STMicroelectronics' new MOSFETs also have other advantages, including a small difference in gate threshold voltage (VGS(th)), which is useful in high-current applications and simplifies the parallel design of multiple power switches. The robustness of the new product is very strong, able to withstand 800A short-circuit pulse current impact for 10µs.
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