Nexperia launches new 600V single-transistor IGBT for outstanding efficiency in power applications
【Lansheng Technology Information】 Nexperia announced today that it will enter the insulated gate bipolar transistor (IGBT) market with its 600 V device series, and the 30A NGW30T60M3DF will be the first to enter the market. Nexperia adds IGBTs to its extensive product portfolio, addressing the growing market demand for high-efficiency high-voltage switching devices in terms of performance and cost. These devices help increase power density in power conversion and motor drive applications, including industrial motor drives (such as 5 to 20 kW (20 kHz) servo motors), robotics, elevators, machine operators, industrial automation, power inverters inverters, uninterruptible power supplies (UPS), photovoltaic (PV) series modules, EV charging, and induction heating and welding.
IGBT is a relatively mature technology. Nonetheless, the market for these devices is expected to grow with the increasing popularity of solar panels and electric vehicle (EV) chargers. Nexperia's 600 V IGBTs feature a robust, cost-effective carrier storage trench gate field stop (FS) structure that provides ultra-low conduction and switching loss performance and high durability at operating temperatures up to 175°C. This increases the efficiency and reliability of power inverters, induction heaters, welding equipment and industrial applications such as motor drives and servos, robotics, elevators, machine operators and industrial automation.
Designers are free to choose between medium-speed (M3) and high-speed (H3) series IGBTs. These IGBTs are designed with a very tight parameter distribution, allowing multiple devices to be safely connected in parallel. In addition, it offers higher output power due to its lower thermal resistance compared to competing devices. These IGBTs are also paralleled with full current reverse soft fast recovery diodes. This means they are suitable for inverter, rectifier and bidirectional conversion circuit applications and are more robust under overcurrent conditions.
Dr. Jiang Ke, general manager of Nexperia's insulated gate bipolar transistor and module business unit, said: "By releasing IGBT, Nexperia provides designers with more choices of power switching devices to meet a wide range of power application needs. IGBT is an extension of Nexperia's existing An ideal complement to our broad portfolio of CMOS and wide bandgap switching devices, Nexperia provides a one-stop shop for power electronics designers."
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